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ct micro rev 1 proprietary & confidential page 1 jun, 2015 CTLM43NS20-R3 n-channel enhancement mosfet package outline schematic features ? ?? ? drain-source breakdown voltage v dss 200 v ? ?? ? drain-source on-resistance r ds(on) 3.6 , at v gs = 10v, i d = 430m a r ds(on) 3.7 , at v gs = 4.5v, i d = 425ma ? ?? ? continuous drain current at t a =25 i d =0.43a ? ?? ? advanced high cell density trench technology ? ?? ? rohs compliance & halogen free applications ? ?? ? power management ? ?? ? lcd display inverter ? ?? ? dc/dc converter ? ?? ? load switch description the CTLM43NS20-R3 is the n-channel logic enhancement mode power field effect transistors are produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance. gate source drain gate drain source
ct micro rev 1 proprietary & confidential page 2 jun, 2015 CTLM43NS20-R3 n-channel enhancement mosfet absolute maximum rating at 25 o c symbol parameters test conditions min notes v ds drain-source voltage 200 v v gs gate-source voltage 20 v i d continuous drain current @t a =25 0.43 a 1 i dm pulsed drain current 1.7 a 1 p d total power dissipation @t a =25 1.25 w 2 t stg storage temperature range -55 to 150 c t j operating junction temperature range -55 to 150 c thermal characteristics symbol parameters test conditions min typ max units notes r ja4 thermal resistance junction-ambient (t=10s) -- 100 -- o c /w 1,4
ct micro rev 1 proprietary & confidential page 3 jun, 2015 CTLM43NS20-R3 n-channel enhancement mosfet electrical characteristics t a = 25c (unless otherwise specified) static characteristics symbol parameters test conditions min typ max units notes b vdss drain-source breakdown voltage v gs = 0v, i d = 250 a 200 - - v i dss drain-source leakage current v ds = 200v, v gs = 0v - - 1 a i gss gate-source leakage current v gs = 20v, v ds = 0v - - 100 na on characteristics symbol parameters test conditions min typ max units notes r ds(on) drain-source on-resistance v gs = 10v, i d = 430ma - 3.6 4.3 3 v gs = 4.5v, i d =425ma - 3.7 4.5 v gs(th) gate-source threshold voltage v gs = v ds , i i d =250 a 1.0 --- 3.0 v 3 dynamic characteristics symbol parameters test conditions min typ max units notes c iss input capacitance v gs =0v, - 373 - pf c oss output capacitance v ds =15v - 25 - c rss reverse transfer capacitance f=1mhz - 8 - switching characteristics symbol parameters test conditions min typ max units notes t d(on) turn-on delay time v ds =25v , r l = 25 , v gs = 10v , r g = 25 - 10 - ns t r rise time - 16 - t d(off) turn-off delay time - 33 - t f fall time - 9 - q g total gate charge v ds =10v , - 4.3 - nc q gs gate-source charge v gs = 4.5v, - 2.7 - q gd gate-drain charge i d = 0.35a - 1.1 -
ct micro rev 1 proprietary & confidential page 4 jun, 2015 CTLM43NS20-R3 n-channel enhancement mosfet drain-source diode characteristics symbol parameters test conditions min typ max units notes v sd body diode forward voltage v gs = 0v, i d = 430ma - 0.8 1.2 v i sd body diode continuous current - - 1 a 1 note: 1. the power dissipation is limited by 150 junction temperature. 2. device mounted on a glass-epoxy board 3. the data tested by pulsed , pulse width 300 s , duty cycle 2% 4. thermal resistance follow jesd51-3. fr-4 25.4 25.4 mm . 2 oz copper actual size
ct micro rev 1 proprietary & confidential page 5 jun, 2015 CTLM43NS20-R3 n-channel enhancement mosfet typical characteristic curves
ct micro rev 1 proprietary & confidential page 6 jun, 2015 CTLM43NS20-R3 n-channel enhancement mosfet
ct micro rev 1 proprietary & confidential page 7 jun, 2015 CTLM43NS20-R3 n-channel enhancement mosfet test circuits & waveforms figure 8: gate charge test circuit figure 9: gate c harge waveform figure 10: switching time test circuit figure 11: s witching time waveform
ct micro rev 1 proprietary & confidential page 8 jun, 2015 CTLM43NS20-R3 n-channel enhancement mosfet package dimension (sc-59) note: dimensions in mm recommended pad layout for surface mount leadform note: dimensions in mm
ct micro rev 1 proprietary & confidential page 9 jun, 2015 CTLM43NS20-R3 n-channel enhancement mosfet marking information e302a: device number ordering information part number description quantity CTLM43NS20-R3 sc-59 reel 3000 pcs e 3 2 0 a
ct micro rev 1 proprietary & confidential page 10 jun, 2015 CTLM43NS20-R3 n-channel enhancement mosfet reflow profile profile feature pb-free assembly profile temperature min. (tsmin) 150c temperature max. (tsmax) 200c time (ts) from (tsmin to tsmax) 60-120 seconds ramp-up rate (t l to t p ) 3c/second max. liquidous temperature (t l ) 217c time (t l ) maintained above (t l ) 60 ? 150 seconds peak body package temperature 260c +0c / -5c time (t p ) within 5c of 260c 30 seconds ramp-down rate (t p to t l ) 6c/second max time 25c to peak temperature 8 minutes max.
ct micro rev 1 proprietary & confidential page 11 jun, 2015 CTLM43NS20-R3 n-channel enhancement mosfet disclaimer ct micro reserves the right to make changes without further notice to any products herein to improve reliability, function or design. ct micro does not assume any liability arising out of the application or use of any produc t or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. ___________________________________________________ ___________________________________ ct micro are not authorized for use as critical com ponents in life support devices or systems without express written approval of ct micr o international corporation. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain li fe, or (c) whose failure to perform when properly used in accordance with instruction for use provided in the labelling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

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